| PART |
Description |
Maker |
| PIC18F25K20 PIC18F45K20 PIC18F24K20 PIC18F46K20 PI |
Flash Memory Programming Specification
|
Microchip Technology
|
| ST662AB08 ST662ACD-TR ST662ABD-TR ST662ABD-TRY |
DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply
|
STMicroelectronics
http://
|
| LTC1262-15 |
12V, 30mA Flash Memory Programming Supply
|
Linear Technology
|
| ST662ACD-TR ST662ABD-TR |
DC-DC converter from 5V to 12V, 0.03A for flash memory programming supply
|
STMicroelectronics
|
| SX48BD SX52BD_PQ SX52BD SX48BD_TQ |
Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability, and On-Chip Debug
|
N.A.
ETC[ETC]
|
| ATMEGA162 ATMEGA162L ATMEGA162V |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 1 MIPS throughput at 1 MHz.
|
Atmel
|
| ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz.
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
| ATMEGA32 ATMEGA32L |
32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 Mhz.
32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation.
|
Atmel
|
| PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
Microsemi, Corp.
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
